基本信息
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Bio
Fukashi Morishita received the B.S. degree in electrical engineering and the M.S. degree in material science from Keio University, Tokyo, Japan, in 1991 and 1993, respectively, and the Ph.D. degree from Waseda University, Fukuoka, Japan, in 2005.
He joined the LSI Laboratory, Mitsubishi Electric Corporation, Itami, Japan, in 1993. Since then, he has been engaged in the research and development of DRAMs. He was transferred to Renesas Technology Corporation, Kodaira, Japan, in 2003, and Renesas Electronics Corporation, Kodaira, in 2010. He is currently involved in the development of CMOS analog circuits, especially ADCs for CMOS image sensors.
Research Interests
Papers共 105 篇Author StatisticsCo-AuthorSimilar Experts
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ELECTRONICSno. 23 (2023): 4885
2023 IEEE Asian Solid-State Circuits Conference (A-SSCC)pp.1-3, (2023)
IEEE Solid-State Circuits Letters (2023): 69-72
2022 IEEE Asian Solid-State Circuits Conference (A-SSCC)pp.1-3, (2022)
Fukashi Morishita,Norihito Kato,Satoshi Okubo,Takao Toi,Mitsuru Hiraki,Sugako Otani, Hideaki Abe, Yuji Shinohara,Hiroyuki Kondo
2021 Symposium on VLSI Technologypp.1-2, (2021)
Circuits at the Nanoscalepp.53-74, (2018)
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Author Statistics
#Papers: 110
#Citation: 1700
H-Index: 21
G-Index: 34
Sociability: 5
Diversity: 1
Activity: 0
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