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Bio
Francesco Maria Puglisi (Senior Member, IEEE) received the Ph.D. degree (Hons.) from the University of Modena and Reggio Emilia, Modena, Italy, in 2015.
He was a Visiting Ph.D. Student with SEMATECH, Albany, NY, USA, in 2013. He has been an Associate Professor of electronics with the University of Modena and Reggio Emilia, since 2018. His research interests are in the characterization and physics-based/compact modeling of resistive memories for nonvolatile memory, neuromorphic, and security applications, and logic-in-memory devices and circuits for edge and non-Von-Neumann computing.
Dr. Puglisi was a recipient/corecipient of several Best Paper and Best Student Paper Awards at prestigious international conferences [including IEEE International Conference on Integrated Circuit Design and Technology (ICICDT) 2013, IEEE European Solid-State Device Research Conference (ESSDERC) 2016 and 2019, IEEE International Integrated Reliability Workshop (IIRW) 2020 and 2021, and IEEE International Reliability Physics Symposium (IRPS) 2022] for his contributions on resistive memories compact modeling and their neuromorphic applications, ferroelectric memory modeling, and random telegraph noise. He has served as the Technical Program Chair of ESSDERC 2022 and IIRW 2022. He is the General Chair of IIRW 2023. He is an Associate Editor of Microelectronic Engineering (Elsevier) and Frontiers in Electronics. He serves or has served on the Technical and/or Management Committee of several IEEE conferences [e.g., International Electron Devices Meeting (IEDM), ESSDERC, IIRW, IRPS, and Electron Devices Technology and Manufacturing Conference (EDTM)].
Research Interests
Papers共 140 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE Transactions on Device and Materials Reliabilityno. 99 (2024): 1-1
Intelligent Computing (2024)
JOURNAL OF APPLIED PHYSICSno. 11 (2023)
IEEE Solid-State Circuits Magazineno. 2 (2023): 167-170
2023 IEEE International Reliability Physics Symposium (IRPS)pp.1-6, (2023)
Microelectronic Engineering (2023): 112062-112062
NANO FUTURESno. 2 (2023): 025003-025003
2023 IEEE International Integrated Reliability Workshop (IIRW)pp.1-6, (2023)
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