高峰 Gao Feng

Feng Gao was born in China, in 1977. He received the B.E. degree in photoelectronics and information engineering from the Shandong University, Jinan, China, in 2000, and the M.Sc. degree in microtechnology and nanotechnology from the Helsinki University of Technology, Espoo, Finland, in 2006. He has been working with VTT Technical Research Centre of Finland, Espoo, Finland, since 2005. His research interests include deep reactive ion etching (DRIE) and general process integration of silicon based MEMS devices.