基本信息
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Bio
Fen Xue (Member, IEEE) received the B.S. and Ph.D. degrees in electrical engineering from Tsinghua University, Beijing, China, in 2013 and 3018, respectively.
She is currently a Postdoctoral working on magnetic random-access-memory (MRAM), and electric-field sensors.
Research Interests
Papers共 41 篇Author StatisticsCo-AuthorSimilar Experts
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Yen-Lin Huang, MingYaun Song,Chien-Min Lee, Yu-Wei Chen,Ching-Yu Chiang, Hen-Rui Liu,Guan-Long Chen,Shan-Yi Yang,Yao-Jen Chang,I-Jung Wang,Yu-Chen Hsin,Yi-Hui Su,
crossref(2024)
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systemsno. 99 (2024): 1-1
AIP Advancesno. 3 (2024): 035018-035018-6
AIP ADVANCESno. 3 (2024)
AIP Advancesno. 3 (2024)
2023 IEEE 34th Magnetic Recording Conference (TMRC)pp.1-2, (2023)
Nature Materialsno. 5 (2023): 591-598
2022 IEEE International Memory Workshop (IMW)pp.1-4, (2022)
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