基本信息
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Bio
Félix Lorenzo Martínez-Viviente was born in Cartagena, Spain, in 1972. He received the degree in physics and Ph.D. degree from the Universidad Complutense de Madrid, Madrid, Spain, in 1995 and 2000, respectively. During his thesis work, he investigated the properties of hydrogenated silicon nitride thin films as a high-k dielectric for the gate of CMOS transistors.
He was with the Universidad Politécnica de Cartagena, Cartagena, where he was involved in high-k dielectrics (hafnium oxide), as well as other topics related to semiconductor physics and high-frequency devices (gallium nitride HFETs, photonic and electromagnetic bandgap structures, and lead-free ferroelectric materials). He has extensive teaching experience in graduate and postgraduate courses on semiconductor physics, microelectronic devices, and photonics.
Research Interests
Papers共 23 篇Author StatisticsCo-AuthorSimilar Experts
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ELECTRONICSno. 3 (2021): 330
Magnetic, Ferroelectric, and Multiferroic Metal Oxidespp.251-264, (2018)
2017 11th International Congress on Engineered Materials Platforms for Novel Wave Phenomena (Metamaterials)pp.142-144, (2017)
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Author Statistics
#Papers: 23
#Citation: 315
H-Index: 11
G-Index: 17
Sociability: 4
Diversity: 2
Activity: 5
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