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个人简介
Mussaab I. Niass, received the B.Sc. degree in electric and electronic engineering from International University of Africa (IUA), Khartoum, Sudan, in 2010 and the M.Sc. degree in electronics engineering from Sudan University of Science and Technology (SUST) in 2015. PhD degree at Information and Communication engineering from Zhengzhou University (ZZU), China in May 2022.
From 2006 to 2015, he was a Teaching Assistant with the Faculty of Engineering, IUA, Khartoum, Sudan. From 2015 till now he is a lecturer at I.U.A. His research interest includes the design and optimization of edge-emitter laser diode (EELD) using numerical simulations for a novel III-V Nitride semiconductor materials.
研究兴趣
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The European Physical Journal Dno. 2 (2024): 1-10
PHYSICA SCRIPTAno. 2 (2024)
Optoelectronics Lettersno. 2 (2024): 89-93
EUROPEAN PHYSICAL JOURNAL Dno. 2 (2024)
International Journal of Communication Systems (2024)
OPTICS EXPRESSno. 4 (2024): 5261-5272
ECS Journal of Solid State Science and Technology (2024)
OPTICS EXPRESSno. 6 (2024): 10146-10157
Materials Science in Semiconductor Processing (2024): 108699
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