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排名必读论文期刊顶会热点AI 简史溯源树小脉星探人才迁徙塔尖人才国防情报追踪开源工具智慧手语
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论文共 343 篇作者统计合作学者相似作者

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Exploring Innovative IGZO-channel based DRAM Cell Architectures and Key Technologies for Sub-10nm Node
Daewon Ha,Y. Lee, S. Yoo,W. Lee,M. H. Cho, K. Yoo, S. M. Lee, S. Lee, M. Terai, T. H Lee, J. H. Bae,K. J. Moon,
2024 IEEE International Memory Workshop (IMW)pp.1-4, (2024)
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Analog-Based Synapse of Double HfZrO2 Ferroelectric FETs With Homogeneous Phase by Superlattice HfO2-ZrO2 Toward Energy Efficient Accelerator
Z.-F. Lou, A. Senapati,J.-Y. Lee, F.-S. Chang, K.-Y. Hsiang, Y.-T. Chang,C. W. Liu, S. Maikap, M. H. Lee
IEEE Transactions on Materials for Electron Devices (2024): 11-14
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Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit
K. -Y Hsiang,F. -S Chang, Z. -F Lou, A. Aich, A. Senapati,J. -Y Lee, Z. -X Li, J. -H Chen,C. -H Liu,C. W. Liu, S. Maikap, P. Su,
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 4 (2024): 2708-2713
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Effect of nitrogen doping on characteristics of SiTe Ovonic threshold switch for selectors
Su-Bong Lee, Chaebin Park, Sang-Heon Park,Yoongu Lee,Jong-Souk Yeo
Materials Science in Semiconductor Processing (2024): 108470
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Device Design and Reliability of GAA MBCFET
M. Kang, M. Chang, Y. Park, C. Noh, S. H. Hong, B. Park, Y. H Park, Y.C Jung, W.S. Lim, G.H. Kim,Y. Lee, H. Yang,
2024 IEEE International Reliability Physics Symposium (IRPS)pp.1-6, (2024)
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Highly Manufacturable, Cost-Effective, and Monolithically Stackable 4F2 Single-Gated IGZO Vertical Channel Transistor (VCT) for sub-10nm DRAM
Daewon Ha,Wonsok Lee,M.H. Cho, M. Terai, S.-W. Yoo, H. Kim,Y. Lee, S. Uhm, M. Ryu, C. Sung,Y. Song, K. Lee,
2023 International Electron Devices Meeting (IEDM)pp.1-4, (2023)
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Development of EUV interference lithography for 25 nm line/space patterns
A. K. Sahoo,P. -h. Chen,C. -h. Lin,R. -s. Liu, B. -j. Lin, T. -s. Kao, P. -w. Chiu, T. -p. Huang, W. -y. Lai, J. Wang,Y. -y. Lee, C. -k. Kuan
Micro and Nano Engineering (2023): 100215-100215
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