Frederic Fossard

Frédéric Fossard received the Ph.D. degree in materials sciences from Orsay University. Paris. France. in 2002. In 2003, he was a Research Engineer at the Fundamental Electronics Institute. Currently, he is with the the Institut d'Electronique Fondamentale, UMR CNRS, Université Paris Sud, Orsay, France. He is the coauthor of 22 published research papers. His current research interests include growth of silicon an germanium by ultrahigh vacuum chemical vapor deposition.