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Research Interests

Papers共 31 篇Author StatisticsCo-AuthorSimilar Experts

By YearBy Citation主题筛选期刊级别筛选合作者筛选合作机构筛选
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Dual Ferroelectric Stack of HfZrO$_\text{2}$/Al:HfO$_\text{2}$ With Tunable Coercive Voltage for High-Density Memory Applications
Jiae Jeong, Hyoungjin Park,Nayeon Kim,Hyun Wook Kim,Eunryeong Hong, Hyeonsik Choi, Seonuk Jeon, Yunsur Kim,Jiyong Woo
IEEE Transactions on Electron Devicespp.1-4, (2024)
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Demonstration of Threshold Switching in Undoped SiO $_{\textit{x}}$ Layer for Oscillation Neurons
Eunryeong Hong,Hyun Wook Kim, Hyeonsik Choi, Seonuk Jeon, Nayeon Kim,Jiyong Woo
IEEE Transactions on Electron Devicesno. 99 (2024): 1-5
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Linear Synaptic Weight Update in Selector-Less HfO $_{\text{2}}$ RRAM Using Al $_{\text{2}}$ O $_{\text{3}}$ Built-..
Yunsur Kim,Hyejin Kim, Seonuk Jeon,Hyun Wook Kim,Eunryeong Hong,Nayeon Kim, Hyeonsik Choi, Hyoungjin Park, Jiae Jeong,Daeseok Lee,Jiyong Woo
IEEE Transactions on Electron Devicesno. 99 (2024): 1-7
Cited0Views0EIWOSBibtex
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Dual Ferroelectric Stack of HfZrO $_\text{2}$ /Al:HfO $_\text{2}$ With Tunable Coercive Voltage for High-Density Memory Applications
Jiae Jeong, Hyoungjin Park,Nayeon Kim,Hyun Wook Kim,Eunryeong Hong, Hyeonsik Choi, Seonuk Jeon, Yunsur Kim,Jiyong Woo
IEEE Transactions on Electron Devicesno. 99 (2024): 1-4
Cited0Views0EIWOSBibtex
0
0
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