基本信息
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Career Trajectory
Bio
Tobias Erlbacher received the Diploma in electrical engineering (microelectronics) from the University of Erlangen-Nuremberg, Erlangen, Germany, in 2004, and the Ph.D. degree in 2008. Since 2009, he has been with the Fraunhofer Institute of Integrated Systems and Device Technology IISB, Erlangen, where he is heading the “Devices” Group. He is currently working on design and development of silicon carbide devices for power applications, and high-temperature integrated circuits and sensors. He has authored a book on lateral power transistors in integrated circuits. He has authored or coauthored more than 130 papers in scientific journals and contributed to 16 patents. His research activities focuses on device modeling, design and integration and technology development for power electronics. This includes the monolithic integration of passive networks and the optimization of power semiconductor devices in silicon integrated circuits.
Research Interests
Papers共 168 篇Author StatisticsCo-AuthorSimilar Experts
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期刊级别
合作者
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ADVANCED ELECTRONIC MATERIALSno. 5 (2024): n/a-n/a
2023 24th International Conference on Electronic Packaging Technology (ICEPT)pp.1-4, (2023)
PRIMEpp.233-236, (2023)
Microno. 4 (2023): 775-784
Key Engineering Materials (2023): 57-62
2023 IEEE PHOTONICS CONFERENCE, IPCpp.1-2, (2023)
2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)pp.201-204, (2023)
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Sensors and Actuators A: Physical (2023): 114268-114268
Defect and Diffusion Forum (2023): 11-16
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Author Statistics
#Papers: 167
#Citation: 1024
H-Index: 17
G-Index: 24
Sociability: 6
Diversity: 2
Activity: 43
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