Emmanuel Dubois

Emmanuel Dubois (Member, IEEE) received the M.S. degree in engineering from the Institut Supérieur d’Electronique et du Numérique (ISEN), Lille, France, in 1985, and the Ph.D. degree from the University of Lille, Lille, in 1990. In 1992, he was a Visiting Scientist with the International Business Machines Corporation (IBM) T.J. Watson Research Centre, Yorktown Heights, NY, USA, working on characterization and simulation of submicrometer SOI-MOSFETs. In 1993, he joined the Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN UMR 8520), Lille, where he is currently the Director of the Research at the Centre National de la Recherche Scientifique, CNRS. He was a Coordinator of three European Projects focused on Schottky source–drain MOS technologies (FP4-IST-QUEST, FP5-IST-SODAMOS, and FP6-IST-METAMOS) and was involved as the Workpackage/Task Leader in a series of European projects devoted to ultimate MOS architectures (FP5 SASEM, FP6 SiNANO NoE, FP7 NANOSIL NoE, FP6 NANOCMOS IP, and FP6 PULLNANO IP). He is currently the Head of the STMicroelectronics-IEMN Joint Laboratory and coordinates the PIA-EQUIPEX project LEAF on advanced laser-based microfabrication for System Moore integration. His research interests cover advanced source/drain CMOS technology, RF and millimeter-wave (mmW) CMOS/BiCMOS, nonconventional thermal energy harvesting, laser micromachining, and functional packaging of compact RF/mmW/photonics subsystems. Dr. Dubois was a recipient of the IBM Award for high-performance computing in 1990. From 2005 to 2016, he was on the Technical Program Committee of European Solid-State Device Research Conference (ESSDERC) and was the Technical Program Committee (TPC) Member of the VSLI Symposium on Technology (2018–2020). Until 2017, he participated to the nanoelectronics committee of the French Observatory on Micro and Nano Technologies (OMNT).