基本信息
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Career Trajectory
Bio
Dylan Bartle (A'93) received the B.S. degree in chemical physics (with honors) from the University of Reading, Reading, U.K., in 1981, and the Postgraduate diploma in electronic and molecular properties of materials from Thames Polytechnic London, U.K., in 1986.
From 1981 to 1986, he was with the Compound Semiconductor Division, GEC Research Laboratories, London, U.K., where he was responsible for development of ion-implanted GaAs MESFET and diode devices for monolithic microwave integrated circuits (MMICs). In 1986, he joined Alpha Industries Inc., Woburn, MA, where he has been involved with many product and process development projects for discrete GaAs devices and MMICs. These include MESFET, high electron-mobility (HEMT), and pHEMT devices for power amplifiers, low-noise amplifiers, and switch functions for both military and commercial applications from $L$- to $W$-band, monolithic p-i-n diodes for high-power $Ka$-band switch applications, Schottky diode devices, and some multifunction MMICs. He has authored or co-authored several papers on GaAs device and process technology and is currently the Engineering Manager in GaAs wafer fabrication.
Research Interests
Papers共 41 篇Author StatisticsCo-AuthorSimilar Experts
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2015 Asia-Pacific Microwave Conference (APMC) (2015): 1-3
Cited24Views0EIWOSBibtex
24
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mag(2013)
Cited21Views0Bibtex
21
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Author Statistics
#Papers: 41
#Citation: 496
H-Index: 17
G-Index: 17
Sociability: 4
Diversity: 2
Activity: 0
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