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个人简介
Dominique Carisetti was born in 1963. He received the graduation degree in physical and chemical from Creteil University in 1986 and the Diploma degree in electronic engineering from the University of Paris XI in 1998. He began to work with Philips Electronic Laboratory in 1987 for the development of the AlGaAs/GaAs HBT technology for Telecommunications and Space Applications. He worked on manufacturing and reliability aspects of this technology. In 1990, he joined the Thales Technology and Methods to develop the III–V-microwave devices and power semiconductors analysis inside the failure lab. His fields of interest cover nondestructive techniques for failure localization as emission microscopy and thermal characterization, and physical analysis as cross-section and delayering. He is currently responsible at Thales Research and Technology of IIIV (GaAs and GaN MMIC) analysis for UMS and Thales Units.
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论文共 5 篇作者统计合作学者相似作者
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Daniel May, Kenza Jbari,Dominique Carisetti, Ana Borta-Boyon,Patrick Garabedian,Afshin Ziaei,Mohamad Abo Ras,Bernhard Wunderle
2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)pp.1-7, (2022)
Dominique Carisetti, Nicolas Sarazin,Nathalie Labat, Nathalie Malbert,Arnaud Curutchet, Benoit Lambert,Laurent Brunel, Karine Rousseau, Eddy Romain Latu, Thomas Frank
International Symposium for Testing and Failure AnalysisISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis (2013)
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