Davide De Salvador

D. De Salvador was born in 1972 in Belluno, Italy. He received the Degree in physics and the Ph.D. degree from Universtiá degli studi di Padova, Padove, Italy, in 1997 and 2001, respectively. His thesis was regarding the study of structural properties of many IV-IV, III-V, and II-VI semiconductor alloys with a particular emphasis on the alloying effects on lattice parameter, ordering, and local bonding distortion. He held a research position for the Istituto Nazionale per la Fisica della Materia (INFM) until 2005. He is currently a Researcher at Padova University. His current research interests are point defects and atomic complexes diffusion and formation in semiconductor materials, with a particular emphasis on the physics of dopant activation in Silicon. He has authored or coauthored 38 peer reviewed articles and 12 conference proceedings. Dr. De Salvador was an invited speaker and chaired the Dopant Characterization session at the Materials Science And Device Issues For Future Si-Based Technologies Symposium of EMRS 2005.