David. R. Hughart

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David R. Hughart (Member, IEEE) received the Ph.D. degree from Vanderbilt University in 2012. He is a Principal Member of the Technical Staff with Sandia National Laboratories. He has led projects investigating reliability characterization techniques for semiconductor devices and radiation effects experimentation and modeling, focusing on nonvolatile memory. He has previously led wafer level reliability for Sandia’s fab and helped develop Sandia’s resistive memory technology.

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