基本信息
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Career Trajectory
Bio
Damien Caliste, born in 1979, graduated from the École Centrale of Lyon in 2002 as an engineer. He received a PhD in solid state physics three years later for his numerical study of defect diffusion in Si and SiGe. After a one-year postdoc in Belgium in the team of X. Gonze, working on ab initio developments, he was hired by the CEA Grenoble. He is ever since specialized in defect simulation for various semiconductor materials.
Research Interests
Papers共 62 篇Author StatisticsCo-AuthorSimilar Experts
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V. Tiwari, M. Arino,S. Gupta, M. Morita, T. Inoue,D. Caliste,P. Pochet,H. Boukari, S. Kuroda,L. Besombes
Physical Review Bno. 4 (2021)
Gallium Nitride Materials and Devices XVI (2021)
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