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个人简介
Dae-Hyun Kim (M’10–SM’17) received the B.S. degree in electrical and electronic engineering from Yonsei University, Seoul, South Korea, in 2003, the M.S. degree in electrical engineering and computer science from Seoul National University, Seoul, in 2005, and the Ph.D. degree in electrical and computer engineering from Georgia Institute of Technology, Atlanta, GA, USA, in 2017.
He joined Samsung Electronics, Seoul, in 2005. He has been a Staff Engineer at Samsung Electronics since 2017. While working at Samsung, he contributed to the design of high-speed graphics DRAMs such as GDDR3/4/5, main memory of DDR2/3, and the next-generation memory. He has authored over than 30 publications in micro-electromechanical system, circuit design, and computer architecture conferences and journals. He holds over ten patents in DRAMs. His current research interests include computer architecture, scalable memory systems architecting and design, fault-tolerant circuit and computing, and analytical modeling of memory and computer systems.
Dr. Kim was awarded the Samsung Electronics Scholarship for Doctorial Education in the United States.
研究兴趣
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2023 IEEE International Solid- State Circuits Conference (ISSCC) (2023)
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IEEE Conference Proceedings (2020): 382-384
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Proceedings of the Fourteenth EuroSys Conference 2019 (2019)
Sigplan Noticesno. 2 (2018): 316-331
mag(2014)
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mag(2013)
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