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个人简介
Daniel S. Green (Member, IEEE) received the B.S. degree in physics and electrical engineering from Yale University, New Haven, CT, USA, in 1998, and the M.S. and Ph.D. degrees in electrical and computer engineering from the University of California, Santa Barbara, Santa Barbara, CA, USA, in 2000 and 2006, respectively. He recently joined the Office of Naval Research, Arlington, VA, USA, as a Program Officer. He was with RF Micro Devices, where he worked to develop gallium nitride technology. He has extensive experience in both growth and characterization of GaN heterostructure materials. He has also done significant work in GaN radio-frequency device development, including device design, fabrication, and reliability measurement. Dr. Green is a member of the Materials Research Society, IEEE Microwave Theory and Technology Society, and IEEE Electron Devices Society.
研究兴趣
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IEEE Journal of Microwavesno. 4 (2023): 1134-1146
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERSno. 7 (2023): 1011-1014
Journal of the Canadian Association of Gastroenterologyno. Supplement_2 (2019): 459-460
Proceedings of the International Symposium on Microelectronicsno. 1 (2018): 000246-000251
semanticscholar(2017)
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IEEE Microwave Magazineno. 2 (2017): 44-59
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作者统计
#Papers: 51
#Citation: 1650
H-Index: 23
G-Index: 40
Sociability: 5
Diversity: 2
Activity: 0
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