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Bio
Donald C. D'Avanzo (S'72–M'78) received the B.S. degree in biomedical engineering from Brown University, Providence, RI, in 1973, and the M.S. and Ph.D. degrees in electrical engineering from Stanford University, Stanford, CA, in 1974 and 1980, respectively. His doctoral research included characterization and modeling of V-groove metal–oxide semiconductor (VMOS) and double-diffused metal–oxide semiconductor (DMOS) transistors and spreading resistance measurements development and data analysis.
Since March 1979, he has been with the Microwave Technology Center, Agilent Technologies (formerly Hewlett-Packard), Santa Rosa, CA, initially as a Member of the Technical Staff. Since 1982, he has served as the Research and Development Project Manager responsible for the development of new GaAs IC technologies including MESFETs, pHEMTs, HBTs, and diodes. He has authored or coauthored numerous publications and presentations. He holds patents in the field of GaAs IC technology.
Dr. D'Avanzo is a member of Tau Beta Pi, Sigma Xi, and the Electrochemical Society. He has served on the Technical Program Committees of the GaAs IC Symposium, the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) International Microwave Symposium (IMS) and the Topical Workshop on Heterojunction Microelectronics. He has served as the symposium chairman of the IEEE GaAs IC Symposium and the Electrochemical Society State of the Art Symposium on Compound Semiconductors.
Research Interests
Papers共 7 篇Author StatisticsCo-AuthorSimilar Experts
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B. Yeats,T. S. Low,K. Alt,M. E. Adamski,M. Bonse,D. C. D'Avanzo, M. Dvorak,C. P. Hutchinson, M. Iwamoto,F. G. Kellert,D. K. Kuhn,R. L. Shimon,
2008 IEEE CSIC SYMPOSIUMpp.35-38, (2008)
Author Statistics
#Papers: 7
#Citation: 231
H-Index: 6
G-Index: 6
Sociability: 4
Diversity: 1
Activity: 0
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