基本信息
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Bio
Cyrille Le Royer received the Ph.D. degree in nanoelectronics from Joseph Fourier University, Grenoble, France, in 2003.
He has been with CEA, Leti, Grenoble, since 2003. His current research interests include the technology and device integration of advanced fully depleted MOSFETs and small-slope transistors.
Research Interests
Papers共 215 篇Author StatisticsCo-AuthorSimilar Experts
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Ahmad Abbas,Cyrille Le Royer, Romain Lavieville, Saliou Gningue, Rihab Chouk,Jerome Biscarrat,Edwige Bano,Philippe Godignon
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.176-179, (2024)
Journal of Applied Physicsno. 17 (2024)
C. Piotrowic,B. Mohamad, P. Fernandes Paes Pinto Rocha,N. Malbert, S. Ruel,P. Pimenta-Barros,M.-A. Jaud,L. Vauche,C. Le Royer
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.382-385, (2023)
B. Mohamad,C. Le Royer, F. Rigaud-Minet, C. Piotrowicz, P. Fernandes Paes Pinto Rocha,C. Leurquin,W. Vandendaele,R. Escoffier,J. Buckley,S. Bécu,J. Biscarrat,R. Gwoziecki
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTMpp.1-3, (2023)
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.345-348, (2022)
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.49-52, (2022)
ACS Applied Electronic Materialsno. 3 (2021): 1170-1177
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