Chih-Sheng Chang

Chih-Sheng Chang (S'93–M'95) received the B.S. and M.S. degrees in electrical engineering from National Taiwan University, Taipei, Taiwan, R.O.C., and the Ph.D. degree from the Department of Electrical and Computer Engineering, University of Illinois, Urbana. Since 1999, he has been with Taiwan Semiconductor Manufacturing Company (TSMC), Ltd., Hsinchu, Taiwan, where he has worked on TCAD, MOS device design, RF devices optimization and characterization, and exploratory device research. He has been the main Device Designer for TSMC's 0.15- and 0.13-$\mu \hbox{m}$ high-speed devices. He has also been in charge of the development of RF active and passive devices based on TSMC's 0.18 $\mu\hbox{m}$, 0.13 $\mu\hbox{m}$, 90 nm, and 65 nm logic technologies. Currently, he is a Program Manager in the Exploratory Technology Department-3, Exploratory Research Division, where he is in charge of the exploratory device research for 22-nm technology node. His current research interests include device scaling, metal gate/high-$\kappa$ gate stack for advance CMOS technology, active and passive devices for RF CMOS technology, and device physics for strained MOS devices.