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个人简介
Changyong Um received the M.S. degree in materials science and engineering from Stanford University, Palo Alto, CA, USA, in 1999, and the Ph.D. degree in materials science and engineering from Carnegie Mellon University, Pittsburgh, PA, USA, in 2006.
In 2006, he joined the Semiconductor Research and Development Center, Samsung Electronics, Hwaseong-si, South Korea. He was assigned to work on the development of phase-change random access memory (PRAM) and transferred to Samsung Advanced Institute of Technology (SAIT), Suwon, South Korea, to launch a new project on SiC/GaN power devices, in 2011. He returned to Semiconductor Research and Development Center, in 2016, to contribute to the development of CMOS image sensors.
研究兴趣
论文共 2 篇作者统计合作学者相似作者
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Min-Woong Seo,Myunglae Chu,Hyun-Yong Jung,Suksan Kim,Jiyoun Song, Daehee Bae,Sanggwon Lee,Junan Lee,Sung-Yong Kim,Jongyeon Lee,Minkyung Kim, Gwi-Deok Lee,
Min-Woong Seo,Myunglae Chu,Hyun-Yong Jung, Suksan Kim,Jiyoun Song,Junan Lee,Sung-Yong Kim,Jongyeon Lee, Sung-Jae Byun, Daehee Bae,Minkyung Kim, Gwi-Deok Lee,
2021 Symposium on VLSI Technologypp.1-2, (2021)
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D-Core
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