基本信息
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Bio
Chanho Park was born in Taejeon, Korea, in January 2, 1964. He received the B.S. degree in physics from Seoul National University, Seoul, Korea, in 1986, and the M.S. degree in electrical engineering from the Korea Advanced Institute of Science and Technology (KAIST), Taejeon, in 1996, where he is currently pursuing the Ph.D. degree.
He had been working for Samsung Electronics, Inc., Puchon, Korea, in the Power Semiconductor Division from 1986 to 1999. He was a Project Leader in the Research and Development Section and was in charge of the development of new devices and new processes. He developed a lot of high-voltage and high-speed switching power semiconductor devices for motor controls, inverters, electronic ballasts, and switch-mode power supplies. He has been a Principal Engineer in the Power Device Division, Fairchild Semiconductor International, Inc., Puchon, since 1999. He received several patents, including U.S. patents and Japanese patents regarding high-voltage and fast switching power semiconductor design. His current interests lie in the fields of power semiconductor devices, device physics, design of high voltage and high speed switching power semiconductor devices, process architecture integration, RF power devices and systems.
Research Interests
Papers共 51 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE TRANSACTIONS ON PARALLEL AND DISTRIBUTED SYSTEMSno. 8 (2023): 2279-2294
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