基本信息
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Career Trajectory
Bio
Carlo Bergonzoni (M′90) was born in Modena, Italy, in 1958. He received the Laurea degree in physics (summa cum laude) from the University of Modena, Modena, Italy, in 1982. His graduate work dealt with the thermodynamics of antiferromagnetic amorphous alloys.
In 1985, he joined the Central Research and Development Unit of SGS Microelettronica, where he contributed to the development of early submicrometer multimegabit EPROM technologies. He was then engaged in the research and development of several CMOS Flash and EEPROM embedded memory technologies, hot carrier reliability characterization techniques, and TCAD methodologies. In 2008–2009, he was with Numonyx Inc., Agrate Brianza, Italy, working on TCAD modeling of CMOS and nonvolatile memory devices. He is currently with STMicroelectronics Technology Research and Development Unit, Agrate Brianza, Italy. He is involved in the development and TCAD modeling of phase-change memory devices, embedded nonvolatile memory devices, and CMOS technologies. His interests and research activities include CMOS architecture development and characterization, device modeling, hot carrier device reliability, carrier transport in semiconductors, and nonvolatile memory devices. In these fields, he has authored or coauthored several technical journal papers and conference contributions.
Dr. Bergonzoni is a member of the IEEE Electron Devices, Reliability, Communications, and Computer Societies.
Research Interests
Papers共 26 篇Author StatisticsCo-AuthorSimilar Experts
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mag(2013)
Cited23Views0Bibtex
23
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Progress in Industrial Mathematics at ECMI 2000Mathematics in Industrypp.239-245, (2002)
Cited179Views0Bibtex
179
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mag(1991)
Cited28Views0Bibtex
28
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