Brian Romanczyk received the B.S. and M.S. degrees in microelectronic engineering from the Rochester Institute of Technology, Rochester, NY, USA, in 2012 and 2013, respectively, and the Ph.D. degree in electrical engineering from the University of California at Santa Barbara, Santa Barbara, CA, USA, in 2019. His current research interests include the design and fabrication of III-nitride materials (III-N) high-electron-mobility transistors (HEMTs) for millimeter-wave power applications.