基本信息
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个人简介
Giorgio Biasiol received his B.S. degree in Physics at the University of Trieste, Italy in 1992, and his Ph.D. degree in Physics in 1998 at the Federal Institute of Technology, Lausanne, Switzerland.
In 1999 he joined the TASC-INFM Laboratory in Trieste, Italy (now IOM-CNR), as a development scientist. Senior development scientist since 2010, technology director since 2021. His activity is mainly focused on the epitaxial growth by MBE and characterization of high mobility GaAs- and InGaAs-based modulation doped devices, photonic structures and radiation detectors, and of InAs/GaAs site-controlled, self-assembled quantum nanostructures. He is co-author of around two hundred papers on international scientific journals. He has been responsible for several research projects, and co-organizer of the 18th European Molecular Beam Epitaxy Workshop in 2015. In 1998 he was awarded of the Young Author Best Paper Award at the 24th ICPS Conference.
研究兴趣
论文共 290 篇作者统计合作学者相似作者
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Zoltán Scherübl, Máté Sütő, Dávid Kóti,Endre Tóvári, Csaba Horváth, Tamás Kalmár, Bence Vasas,Martin Berke,Magdhi Kirti,Giorgio Biasiol,Szabolcs Csonka,Péter Makk,
arxiv(2024)
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arXiv (Cornell University) (2023)
Mathieu Jeannin, Eduardo Cosentino,Stefano Pirotta,Mario Malerba,Giorgio Biasiol,Jean-Michel Manceau,Raffaele Colombelli
APPLIED PHYSICS LETTERSno. 24 (2023)
Photonicsno. 933 (2023): 933-933
arxiv(2023)
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Mathieu Jeannin, Eduardo Cosentino,Stefano Pirotta,Mario Malerba,Giorgio Biasiol,Jean-Michel Manceau,Raffaele Colombelli
HAL (Le Centre pour la Communication Scientifique Directe) (2023)
JOURNAL OF APPLIED CRYSTALLOGRAPHYno. Pt 4 (2023): 961-966
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作者统计
#Papers: 295
#Citation: 5823
H-Index: 34
G-Index: 62
Sociability: 7
Diversity: 0
Activity: 1
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