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Since 2015 he is more intensively focused to boron nitride and other two-dimensional semiconductors of the III-VI family, namely InSe, GaSe and GaTe. Gil contributed to the organization of tens of international events and contributed to the launching of several series semiconductor conferences: Int.
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Gallium Nitride Materials and Devices XIX (2024)
Eli Janzen, Hannah Schutte, Juliette Plo,Adrien Rousseau,Thierry Michel,Wilfried Desrat,Pierre Valvin, Vincent Jacques,Guillaume Cassabois,Bernard Gil,James H. Edgar
Scientific reportsno. 1 (2024): 169-169
Hui Shi,Mingyuan Wang, Hongying Chen,Adrien Rousseau, Junpeng Shu,Ming Tian,Ruowang Chen, Juliette Plo,Pierre Valvin,Bernard Gil,Jiajie Qi,Qinghe Wang,
arxiv(2024)
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Seokho Moon,Adrien Rousseau, Francis Ngome Okello Odongo,Youngjae Kim,Yunjae Park,Jiye Kim,Pierre Valvin,Jaehee Cho,Feng Ding,Jaedong Lee,Si-Young Choi,Bernard Gil,
Light-Emitting Devices, Materials, and Applications XXVII (2023)
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A. Durand,T. Clua-Provost,F. Fabre, P. Kumar, J. Li,J. H. Edgar,P. Udvarhelyi, A. Gali, X. Maric,C. Robert,J. M. Gerard,B. Gil,
PHYSICAL REVIEW LETTERSno. 11 (2023): 116902-116902
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npj Computational Materialsno. 1 (2023): 1-8
Alexandra Ibanez, Nikita Nikitskiy, Aly Zaiter,Pierre Valvin,Wilfried Desrat,Thomas Cohen,M. Ajmal Khan,Guillaume Cassabois,Hideki Hirayama,Patrice Genevet,Julien Brault,Bernard Gil
JOURNAL OF APPLIED PHYSICSno. 19 (2023)
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