基本信息
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个人简介
Bernd Heinemann received the Diploma degree in physics from Humboldt Universität zu Berlin, Berlin, Germany, in 1984, and the Ph.D. degree in electrical engineering from Technische Universit at Berlin, Berlin, in 1997.
He joined the Leibniz Institute for High Performance Microelectronics (IHP) GmbH (now Innovations for High Performance Microelectronics), Frankfurt, Germany, in 1984. From 1984 to 1992, he contributed to the development of an epi-free 0.8-µm BiCMOS technology. Since 1993, he has been a member of a team working on the exploration and technological implementation of SiGe interconnection bipolar transistors (HBTs). His research interests include development and characterization of MOS and bipolar devices.
研究兴趣
论文共 200 篇作者统计合作学者相似作者
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2023 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, RFICpp.137-140, (2023)
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMICpp.197-200, (2023)
Dirk Wolansky, Jean-Paul Blaschke,Jürgen Drews,Thomas Grabolla,Bernd Heinemann,Thomas Lenke,Holger Rücker,Markus Andreas Schubert,Sebastian Schulze, Heinz-Peter Stoll,Marvin Zöllner, Uwe Richter,
Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)no. 24 (2020): 1749-1749
D. Wolansky, Jean-Paul Blaschke,Jürgen Drews,T. Grabolla,B. Heinemann,Thomas Lenke,H. Rücker,Markus Andreas Schubert,Sebastian Schulze, H.-P. Stoll,Marvin Zöllner, Uwe Richter,
ECS transactionsno. 5 (2020): 351-361
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作者统计
#Papers: 200
#Citation: 6292
H-Index: 42
G-Index: 69
Sociability: 6
Diversity: 3
Activity: 8
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