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个人简介
Benoît Hackens was born in Leuven, Belgium, on December 3, 1976. He received the Ph.D. degree from the Université Catholique de Louvain, Louvain-la-Neuve, Belgium, in 2005. His doctoral research concerned ballistic and coherent electron transport properties of low-dimensional systems fabricated from bismuth films and semiconductor heterostructures.
He is currently a European Community (EC) Marie Curie grant holder with the Laboratoire de Spectrométrie Physique (SPECTRO), Université Joseph Fourier, Grenoble, France. He is involved in low-temperature scanning probe measurements on semiconductor nanodevices.
研究兴趣
论文共 156 篇作者统计合作学者相似作者
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Alessandra Canetta,Sergio Gonzalez-Munoz,Viet-Hung Nguyen,Khushboo Agarwal, Pauline de Crombrugghe de Picquendaele,Yuanzhuo Hong,Sambit Mohapatra,Kenji Watanabe,Takashi Taniguchi,Bernard Nysten,Benoit Hackens,Rebeca Ribeiro-Palau,
NANOSCALEno. 18 (2023): 8134-8140
arxiv(2022)
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Pauline de Crombrugghe,Cristiane Nascimento Santos,Yuanzhuo Hong,Sambit Mohapatra,Kenji Watanabe, Takeshi Taniguchi, Jean‐François Lampin,Rebeca Ribeiro-Palau,Bernard Nysten,Benoît Hackens
HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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arXiv (Cornell University) (2021)
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