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个人简介
Benjamin Damilano received the Ph.D. degree from the University of Nice, France.
Before joining the CNRS-CRHEA Laboratory as a Researcher in 2002, he worked in Picogiga, a world leader in the molecular beam epitaxy (MBE) of III–V semiconductor materials. He was engaged in the MBE growth of (Ga,In,Al)N materials (quantum dots, light-emitting diodes, HEMTs). His research is now focused on III-V dilute nitride semi-conductors and their application in optoelectronics (long-wavelength lasers, IR photodetectors, solar cells) and on the study of GaN and GaInN nanostructures for the realization of white-light-emitting diodes. He is the author/coauthor of more than 110 publications and three patents.
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论文共 324 篇作者统计合作学者相似作者
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Gallium Nitride Materials and Devices XIX (2024)
OPTICAL MATERIALS EXPRESSno. 3 (2024): 792-800
ACS PHOTONICSno. 2 (2024): 789-794
Amélie Dussaigne,Frederic Barbier,Patrick Le Maitre,Helge Haas,Jean-Christophe Pillet, Guillaume Veux,Colin Paillet,Adeline Grenier, Névine Grenier,Zineb Saghi,Audrey Jannaud,Adrien Michon,
Gallium Nitride Materials and Devices XIX (2024)
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEno. 16 (2023)
Benjamin Damilano, Rémi Aristégui,Henryk Teisseyre,Stéphane Vézian, Vincent Guigoz,Aimeric Courville,Ileana Florea,Philippe Vennéguès,Michal Bockowski,Thierry Guillet,Maria Vladimirova
arXiv (Cornell University) (2023)
arXiv (Cornell University) (2023)
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