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he pioneered the growth of epitaxial composites of metallic erbium arsenide and related rare-earth compound nanoparticles in semiconductor hosts. He developed improved thermoelectric materials for the direct creation of electrical power from waste heat and produced semiconductor devices that increased electron-hole tunneling for creation of multicolor solar cells. His work most recently produced high-performance quantum-dot lasers grown epitaxially on on-axis silicon substrates, an advancement that is enabling the replacement of copper with light beams as the interconnects on computer chips.
Over his career, Gossard wrote more than thirteen hundred research papers and received numerous awards including the 1983 Oliver Buckley Condensed Matter Physics prize and the 2001 James McGroddy New Materials prize from the American Physical Society. He was elected to the National Academy of Engineering in 1987 and to the National Academy of Sciences in 2001. He received the U.S. National Medal of Technology and Innovation in 2016.
Over his career, Gossard wrote more than thirteen hundred research papers and received numerous awards including the 1983 Oliver Buckley Condensed Matter Physics prize and the 2001 James McGroddy New Materials prize from the American Physical Society. He was elected to the National Academy of Engineering in 1987 and to the National Academy of Sciences in 2001. He received the U.S. National Medal of Technology and Innovation in 2016.
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OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) (2022)
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2022 Conference on Lasers and Electro-Optics (CLEO)pp.1-2, (2022)
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Conference on Lasers and Electro-Optics (2022)
conference on lasers and electro opticspp.1-2, (2021)
P. Steindl,H. Snijders, G. Westra, E. Hissink, K. Iakovlev,S. Polla,J. A. Frey,J. Norman,A. C. Gossard,J. E. Bowers,D. Bouwmeester,W. Löffler
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