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个人简介
Anthony P. Mcfadden received the B.S. degree in electrical engineering and applied math from UNM, Albuquerque, New Mexico, and the Ph.D. degree in electrical engineering from Palmstrom Group in Summer 2017. He joined UCSB, in Fall 2010. He was a Post-Doctoral Researcher until Summer 2020. As a Post-Doctoral Researcher, he worked on developing widely tunable III-AsSb based lasers in the 2.2–2.6 μm range. He also studied different growth techniques for superconductor-semiconductor-superconductor trilayers for superconducting qubits. In Summer 2020, he moved to Boulder, CO with his family to work as a Staff Scientist at NIST. He remains a collaborator with the group as a Visiting Scientist.
研究兴趣
论文共 48 篇作者统计合作学者相似作者
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Teun A. J. van Schijndel,Anthony P. McFadden,Aaron N. Engel,Jason T. Dong, Wilson J. Yánez-Parreño, Manisha Parthasarathy,Raymond W. Simmonds,Christopher J. Palmstrøm
arxiv(2024)
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Anthony McFadden,Aranya Goswami, Tongyu Zhao, Teun van Schijndel, Trevyn F. Q. Larson, Sudhir Sahu, Stephen Gill,Florent Lecocq,Raymond Simmonds,Chris Palmstrøm
arxiv(2024)
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Atom Probe Tomography of Surfaces, Interfaces, and Impurity Elements in Transmon Materials (2023)
IEEE Journal of Quantum Electronicsno. 1 (2023): 1-9
HAL (Le Centre pour la Communication Scientifique Directe) (2022)
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P. Zhang,A. Zarassi,M. Pendharkar,J. S. Lee, L. Jarjat,V. Van de Sande,B. Zhang, S. Mudi,H. Wu,S. Tan,C. P. Dempsey,A. P. McFadden,
arXiv (Cornell University) (2022)
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作者统计
#Papers: 49
#Citation: 585
H-Index: 18
G-Index: 22
Sociability: 5
Diversity: 2
Activity: 22
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