Aniruddhan GowrisankarCenter for Nano Science and Engineering (CeNSE) Indian Institute of Science (IISc)关注立即认领分享关注立即认领分享基本信息浏览量:0职业迁徙个人简介暂无内容研究兴趣论文共 2 篇作者统计合作学者相似作者按年份排序按引用量排序主题筛选期刊级别筛选合作者筛选合作机构筛选时间引用量主题期刊级别合作者合作机构Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF ApplicationsAniruddhan Gowrisankar,Vanjari Sai Charan,Hareesh Chandrasekar, Anirudh Venugopalarao,R. Muralidharan,Srinivasan Raghavan,Digbijoy N. NathIEEE Transactions on Electron Devicesno. 4 (2023): 1622-1627引用2浏览0EIWOS引用20AlGaN/GaN HEMTs on Silicon With a Graded-AlGaN Back-Barrier for RF ApplicationsAniruddhan Gowrisankar,Sai Charan Vanjari,Abheek Bardhan, Anirudh Venugopalarao,Hareesh Chandrasekar,Rangarajan Muralidharan,Srinivasan Raghavan,Digbijoy N. Nath2022 IEEE International Conference on Emerging Electronics (ICEE)pp.1-4, (2022)引用0浏览0EIWOS引用00作者统计合作学者合作机构D-Core合作者学生导师暂无相似学者,你可以通过学者研究领域进行搜索筛选数据免责声明页面数据均来自互联网公开来源、合作出版商和通过AI技术自动分析结果,我们不对页面数据的有效性、准确性、正确性、可靠性、完整性和及时性做出任何承诺和保证。若有疑问,可以通过电子邮件方式联系我们:report@aminer.cn