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Bio
Alexander Tsibizov received the Dipl.-Eng. and Ph.D. degrees in semiconductor physics from the National Research University of Electronic Technology (MIET), Moscow, Russia, in 1997 and 2004, respectively.
Until 2004, he was a Researcher with the P.N. Lebedev Physical Institute, working on the III-V heterostructure electronic devices. From 2004 to 2017, he was with Synopsys Switzerland LLC, engaged in TCAD simulations and tools development for semiconductor devices and fabrication processes. Since 2017, he has been a Senior Researcher with Advanced Power Semiconductor Laboratory, ETH Zurich, Zurich, Switzerland. His research interests include the simulation and characterization of wide bandgap (in particular SiC) semiconductor devices.
Research Interests
Papers共 30 篇Author StatisticsCo-AuthorSimilar Experts
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IEEE TRANSACTIONS ON ELECTRON DEVICESno. 12 (2024): 7709-7715
Materials Science Forum (2023): 67-71
IEEE TRANSACTIONS ON ELECTRON DEVICESno. 4 (2023): 2153-2156
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.265-268, (2022)
IEEE Transactions on Power Electronicsno. 9 (2022): 10572-10584
CIPS 2022; 12th International Conference on Integrated Power Electronics Systemspp.1-6, (2022)
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Materials Science Forum (2021): 647-652
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Author Statistics
#Papers: 30
#Citation: 394
H-Index: 11
G-Index: 19
Sociability: 4
Diversity: 2
Activity: 2
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