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个人简介
Alessandro Floriduz (M’16) received the B.Sc. degree in industrial engineering and the M.Sc. degree in electrical engineering from the Università degli Studi di Pavia, Pavia, Italy, in 2013 and 2015, respectively.
Since 2016, he has been a Fellow with the Electrical Group, Engineering Department, CERN (European Organization for Nuclear Research), Geneva, Switzerland, where he has been involved in the study of radiation effects on gallium nitride (GaN) and silicon carbide (SiC) electronic and optoelectronic devices. His current research interests include decentralized and distributed control of microgrids, network reduction techniques, physics and radiation effects of GaN-based devices, and radiation-hardened power electronics.
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IEEE Electron Device Lettersno. 99 (2024): 1-1
Japanese Journal of Applied Physicsno. 11 (2022)
2021 IEEE International Electron Devices Meeting (IEDM)pp.4.5.1-4.5.4, (2021)
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)pp.147-150, (2021)
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