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个人简介
Anirban Bhattacharyya was born in Orissa, India, in 1971. He received the B.Sc. degree in physics from the St. Xavier’s College, Calcutta, India, the M.Sc. degree in electronic science from the University of Calcutta, India, in 1993 and 1995, respectively, the M.Tech. degree in materials science from IIT Kanpur, India, in 1999, and the Ph.D. degree in electrical engineering from Boston University in 2005, working on the development of ultraviolet emitters based on the III-Nitrides materials grown by Molecular Beam Epitaxy under the supervision of Prof. Theodore D. Moustakas. He spent a year with the Indian Association for the Cultivation of Science Calcutta as a Junior Research Fellow. Subsequently, he moved to the Wide Band-Gap Semiconductors Laboratory, Boston University, USA, for his Ph.D. research.
Until 2009, he continued at Boston University as a Senior Research Associate. In 2009, he joined as an Assistant Professor with the Institute of Radio Physics and Electronics, University of Calcutta. Recently, he has been involved with setting up of advanced semiconductor growth and fabrication facilities at the Center for Research in Nanoscience and Nanotechnology, University of Calcutta. He has more than 80 research publications and one U.S. Patent.
研究兴趣
论文共 110 篇作者统计合作学者相似作者
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Journal of Crystal Growthpp.127792, (2024)
Thin Solid Films (2023): 139958-139958
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作者统计
#Papers: 114
#Citation: 1777
H-Index: 24
G-Index: 38
Sociability: 6
Diversity: 0
Activity: 1
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